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2011

  • Organic light-emitting diode with indium-free metallic bilayer as transparent anode. "Organic Electronics: physics, materials, applications". May 2011, vol. 12, nº 5, p. 818-822. <doi: 10.1016/j.orgel.2011.02.015>
  • Electron-withdrawing substituted tetrathiafulvalenes as ambipolar semiconductors. "Chemistry of Materials". 8th of February 2011, vol. 23, nº 3, p. 851-861. <doi: 10.1021/cm1021867>
  • Simultaneous gettering and emitter formation in multicrystalline-Si wafers by annealing phosphorus doped amorphous silicon compounds. "Applied Physics Letters". 10th of January 2011, vol. 98, nº 2, Art. nº 022102. <doi: 10.1063/1.3535616>
  • Laser-fired contact optimization in c-Si solar cells. "Progress in Photovoltaics: Research and Applications". 2011. <doi: 10.1002/pip.1115>
  • Crystalline silicon solar cells beyond 20% efficiency. "Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011". 2011, Art. nº 5744231. <doi: 10.1109/SCED.2011.5744231>
  • Laser fired contacts applied to the rear surface of heretojunction silicon solar cells. "Solar Energy Materials and Solar Cells". 2011. <doi: 10.1016/j.solmat.2011.06.049>


2010

  • Automatic supervision and fault detection of PV systems based on power losses analysis. "Energy conversion and management", Octubre 2010, vol. 51, núm. 10, p. 1929-1937.  <doi: 10.1016/j.enconman.2010.02.025>
  • 3D metallo-dielectric structures combining electrochemical and electroplating techniques. "Microelectronic engineering", Juny 2010, vol. 87, núm. 5-8, p. 1458-1462.  <doi: 10.1016/j.mee.2009.11.108>
  • A million-channel reformer on a fingertip: Moving down the scale in hydrogen production. "International journal of hydrogen energy", Abril 2010, vol. 35, núm. 8, p. 3472-3479.  <doi: 10.1016/j.ijhydene.2010.01.146>
  • Dielectric charging characterization on microelectromechanical switches by discharge current transient. "Applied physics letters", Març 2010, vol. 96, núm. 18, p. 1-3.  <doi: 10.1063/1.3427363>
  • Fabrication of flexible interdigitated ¿-electrodes (FID¿Es) for the development of a conductimetric immunosensor for atrazine detection based on antibodies labelled with gold nanoparticles. "Microelectronic engineering", Febrer 2010, vol. 173, núm. 2, p. 02/2010-167.  <doi: 10.1016/j.mee.2009.07.001>
  • Fabrication of flexible interdigitated mu-electrodes (FID mu Es) for the development of a conductimetric immunosensor for atrazine detection based on antibodies labelled with gold nanoparticles. "Microelectronic engineering", Febrer 2010, vol. 87, núm. 2, p. 167-173.  <doi: 10.1016/j.mee.2009.07.001>
  • Surface recombination analysis in silicon-heterojunction solar cells. "Solar energy materials and solar cells", Febrer 2010, vol. 94, núm. 2, p. 282-286.  <doi: 10.1016/j.solmat.2009.09.017>
  • Interchain and intrachain emission branching in polymer light-emitting diode doped by organic molecules. "Applied physics letters", Gener 2010, vol. 96, núm. 3, p. 1-3.  <doi: 10.1063/1.3276271>

2009

  • New approaches for the fabrication of photonic structures of nonlinear optical materials. "Journal of luminescence", Desembre 2009, vol. 129, núm. SI:12, p. 1441-1447.  <doi: 10.1016/j.jlumin.2009.03.035>
  • Energy efficiency of pulsed actuations on linear resonators. "IEEE transactions on circuits and systems I: regular papers", Desembre 2009, vol. 56, núm. 12, p. 2678-2688.  <doi: 10.1109/TCSI.2009.2016635>
  • Study of emitter width effects on BF, fT and fmax of 200 GHz SiGe HBTs by DD, HD and EB device simulation. "Semiconductor science and technology", Novembre 2009, vol. 24, núm. 11, p. 1-8.  <doi: 10.1088/0268-1242/24/11/115005>
  • N-type PTCDI¿C13H27 thin-film transistors deposited at different substrate temperature. "Thin solid films", Octubre 2009, vol. 517, núm. 23, p. 6271-6274.
  • Study of emitter width effects on BF, fT and fmax of 200 GHz SiGe HBTs by DD, HD and EB device simulations. "Semiconductor science and technology", Octubre 2009, núm. 24, p. 1-7.
  • Study of bypass diodes configuration on PV modules. "Applied energy", Setembre 2009, vol. 86, núm. 9, p. 1632-1640.
  • Study of emitter width effects on beta(F), f(T) and f(max) of 200 GHz SiGe HBTs by DD, HD and EB device simulation. "Semiconductor science and technology", Setembre 2009, vol. 24, núm. 11, p. 5005-5012.  <doi: 10.1088/0268-1242/24/11/115005>
  • Optoelectronic properties of CuPc thin films deposited at different substrate temperatures. "Journal of physics D. Applied physics", Juliol 2009, vol. 42, núm. 14, p. 5102-5107.
  • A comparative study of hydrogen- and hydroxyl-related pentacene defect formation in thin films prepared by Langmuir-Blodgett technique and thermal evaporation. "Physica status solidi A. Applications and materials science (Print edition)", Juliol 2009, vol. 206, núm. 7, p. 1404-1409.
  • Analysis Model of Mismatch Power Losses in PV Systems. "Journal of solar energy engineering. Transactions of the ASME", Maig 2009, vol. 131, núm. 024504, p. 1.
  • DC and small-signal comparison of horizontal emitter designs of InGaP/GaAs heterojunction bipolar transistors. "International journal of numerical modeling. Electronic networks devices and fields", Abril 2009, núm. 22, p. 411-421.
  • Optimization of KOH etching process to obtain textured substrates suitable for heterojunction solar cells fabricated by HWCVD. "Thin solid films", Abril 2009, vol. 517, núm. 12, p. 3578-3580.
  • Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD. "Materials science and engineering B. Solid state materials for advanced tech", Març 2009, vol. 159-160, p. 23-26.
  • Modeling and measuring transient discharge current of microelectromechanical switches after dielectric charging by voltage stress. "Applied physics letters", Gener 2009, vol. 94, núm. 043503, p. 1.

2008

  • Very low recombination phosphorus emitters for high efficiency crystalline silicon solar cells. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 23 (12) : 1-4. ISSN: 0268-1242
  • Templated growth of tungsten oxide micro/nanostructures using aerosol assisted chemical vapour deposition. MATERIALS LETTERS , 62 (30) : 4582-4584. ISSN: 0167-577X
  • Integrating multi-unit electrophysiology and plastic culture dishes for network neuroscience. Lab On a Chip: miniaturisation for chemistry and biology Additional Title Information , 8 (11) : 1896-1905. ISSN: 1473-0197
  • Semiconducting P3HT microstructures: fibres and tubes obtained from macroporous silicon template. Physica Status Solidi. Rapid Research Letters , 2 (5) : 206-208. ISSN: 1862-6254
  • Semiconducting P3HT microstructures: fibres and tubes obtained from macroporous silicon template. Physica Status Solidi. Rapid Research Letters , 2 (5) : 206-208. ISSN: 1862-6254
  • Mid-IR characterization of photonic bands in 2D photonic crystals on silicon. THIN SOLID FILMS , 516 (22) : 8059-8063. ISSN: 0040-6090
  • Improving selective thermal emission properties of three-dimensional macroporous silicon through porosity tuning. Applied Physics Letters , 93 (8) : 1-6. ISSN: 0003-6951
  • Low temperature back-surface-field contacts deposited by hot-wire CVD for heterojunction solar cells . THIN SOLID FILMS , 516 (20) : 6782-6785. ISSN: 0040-6090
  • Colloidal crystal wires . ADVANCED MATERIALS , 20 (12) : 2315-2320. ISSN: 0935-9648
  • Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet - art. no. 096110. Journal of Applied Physics , 103 (9) : 96110-96110. ISSN: 0021-8979
  • Optical properties of 3D macroporous silicon structures. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECH , 149 (3) : 275-280. ISSN: 0921-5107
  • First use of macroporous silicon loaded with catalyst film for a chemical reaction: A microreformer for producing hydrogen from ethanol steam reforming. JOURNAL OF CATALYSIS , 255 (2) : 228-233. ISSN: 0021-9517
  • Macroporous silicon: A versatile material for 3D structure fabrication. Sensors and Actuators A: Physical , 141 (2) : 662-669. ISSN: 0924-4247
  • Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200 °C. THIN SOLID FILMS , 8 : 761-764. ISSN: 0040-6090
  • Defect states in pentacene thin films prepared by thermal evaporation and Langmuir-Blodgett technique. JOURNAL OF NON-CRYSTALLINE SOLIDS , 354 (19-25) : 2888-2891. ISSN: 0022-3093
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darrera modificació: Desembre 2011
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