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Electrònica

New strategy for local diffusion of dopants in crystalline silicon
A new methodology to replace conventional diffusion processes has been developed and patented. This simple procedure offers a wide versatility, since it allows the creation of locally doped regions without photolithography steps while simultaneously reducing the global thermal budget of the emitter creation process. The potential of the method has been already confirmed for silicon solar cell applications. Partners to further develop the technology and/or to establish commercial agreements along with technical cooperation are sought. Ref. MKT2012/0137_I

Novel motion nanosensor based on mechanical amplification
In the past years there is an increasing interest to incorporate in any electronic device a motion sensor to provide interaction: measuring our reactions, posi-tion or motion. Therefore, the motion sensors should be low-cost but more precise. A nanosensor based on a motion amplifier mechanism is presented. The design can amplify extremely small displacements (nanometers) up to 200 times. Partners to further develop the system and/or to establish commercial agreements along with technical cooperation are sought.
Ref. MKT2012/0124_I

Single step slicing ultra thin crystalline Silicon layers from Si wafers
A new technology to obtain ultra thin crystalline Silicon layers has been developed and patented. This innovative method allows to manufacture controllable thin film thickness using only a single step. Partners to further develop the system and/or to establish commercial agreements along with technical cooperation are sought. Ref. MKT2012/0131_I